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Toshiba Semiconductor and Storage 2SD2695(T6CNO,A,F)
TRANS NPN 2A 60V TO226-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Packaging
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 2000 @ 1A, 2V
- Part Status
- Obsolete
- Voltage - Collector Emitter Breakdown (Max)
- 60V
- Power - Max
- 900mW
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 100MHz
- Supplier Device Package
- TO-92MOD
- Vce Saturation (Max) @ Ib, Ic
- 1.5V @ 1mA, 1A
- Current - Collector (Ic) (Max)
- 2A
- Series
- -
- Current - Collector Cutoff (Max)
- 10µA (ICBO)