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Toshiba Semiconductor and Storage 2SC5201,T6MURAF(J

TRANS NPN 50MA 600V TO226-3

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Operating Temperature
150°C (TJ)
Frequency - Transition
-
Supplier Device Package
TO-220NIS
Vce Saturation (Max) @ Ib, Ic
1V @ 150mA, 1.2A
Current - Collector (Ic) (Max)
3A
Series
-
Current - Collector Cutoff (Max)
100µA (ICBO)
Packaging
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 300mA, 5V
Part Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
400V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Type
NPN