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Toshiba Semiconductor and Storage 2SC2482(FJTN,F,M)

TRANS NPN 100MA 300V TO226-3

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Packaging
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 10V
Part Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
300V
Power - Max
900mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Transistor Type
NPN
Operating Temperature
150°C (TJ)
Frequency - Transition
50MHz
Supplier Device Package
TO-92MOD
Vce Saturation (Max) @ Ib, Ic
1V @ 1mA, 10mA
Current - Collector (Ic) (Max)
100mA
Series
-
Current - Collector Cutoff (Max)
1µA (ICBO)