Toshiba Semiconductor and Storage 2SB1457,T6YMEF(M

Product Details

Vce Saturation (Max) @ Ib, Ic

1.5V @ 6mA, 3A

Current - Collector (Ic) (Max)

4A

Series

-

Current - Collector Cutoff (Max)

2µA (ICBO)

Packaging

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 3A, 2V

Part Status

Obsolete

Voltage - Collector Emitter Breakdown (Max)

100V

Power - Max

2W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Transistor Type

PNP

Operating Temperature

150°C (TJ)

Frequency - Transition

-

Supplier Device Package

TO-220NIS