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Toshiba Semiconductor and Storage 2SA1930(Q,M)
TRANS PNP 180V 2A TO220NIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Supplier Device Package
- LSTM
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 1mA, 10mA
- Current - Collector (Ic) (Max)
- 50mA
- Series
- -
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Packaging
- Tape & Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Part Status
- Obsolete
- Voltage - Collector Emitter Breakdown (Max)
- 150V
- Power - Max
- 800mW
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 200MHz