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Toshiba Semiconductor and Storage 1SS307(TE85L,F)
DIODE GEN PURP 30V 100MA SMINI
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 1490
Product Details
- Current - Average Rectified (Io)
- 1A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -50°C ~ 175°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 900mV @ 1A
- Packaging
- Digi-Reel®
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214AA, SMB
- Capacitance @ Vr, F
- 120pF @ 4V, 1MHz
- Supplier Device Package
- DO-214AA (SMB)
- Current - Reverse Leakage @ Vr
- 500µA @ 200V
- Voltage - DC Reverse (Vr) (Max)
- 200V