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Toshiba Semiconductor and Storage 1SS196(TE85L,F)
DIODE GEN PURP 80V 100MA SC59-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 2392
Product Details
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-219AB
- Capacitance @ Vr, F
- 4pF @ 4V, 1MHz
- Supplier Device Package
- DO-219AB (SMF)
- Reverse Recovery Time (trr)
- 1.8µs
- Current - Reverse Leakage @ Vr
- 10µA @ 600V
- Voltage - DC Reverse (Vr) (Max)
- 600V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 700mA
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 1A
- Diode Type
- Standard