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Toshiba Semiconductor and Storage 1SS190TE85LF
DIODE GEN PURP 80V 100MA SC59-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 2812
Product Details
- Supplier Device Package
- TUMD2M
- Reverse Recovery Time (trr)
- 7.35ns
- Current - Reverse Leakage @ Vr
- 50µA @ 30V
- Voltage - DC Reverse (Vr) (Max)
- 40V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 500mA
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- 150°C (Max)
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 550mV @ 500mA
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 2-SMD, Flat Lead
- Capacitance @ Vr, F
- 130pF @ 0V, 1MHz