Texas Instruments CSD17308Q3T

Product Details

Rds On (Max) @ Id, Vgs

5.7mOhm @ 2A, 4.5V

Series

NexFET™

Power Dissipation (Max)

1.7W (Ta)

FET Type

P-Channel

Supplier Device Package

9-DSBGA (1.5x1.5)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

14.6nC @ 4.5V

Vgs (Max)

-6V

Drain to Source Voltage (Vdss)

8V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2275pF @ 4V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

9-UFBGA, DSBGA

Vgs(th) (Max) @ Id

1.05V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)