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Taiwan Semiconductor Corporation TSN525M60HS4G
DIODE GEN PURP 60V 25A 8PDFN
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.41
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 100ns
- Current - Reverse Leakage @ Vr
- 1µA @ 300V
- Voltage - DC Reverse (Vr) (Max)
- 300V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 3A
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Tape & Box (TB)
- Voltage - Forward (Vf) (Max) @ If
- 1.5V @ 9A
- Diode Type
- Avalanche
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- SOD-64, Axial
- Capacitance @ Vr, F
- -
- Supplier Device Package
- SOD-64