Taiwan Semiconductor Corporation TSM650P02CX RFG

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

2.3V @ 25µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

100mOhm @ 2.7A, 10V

Series

HEXFET®

Power Dissipation (Max)

1.3W (Ta)

FET Type

N-Channel

Supplier Device Package

Micro3™/SOT-23

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

1nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 15V