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Taiwan Semiconductor Corporation S8MC V6G

DIODE GEN PURP 8A DO214AB

Manufacturer
Taiwan Semiconductor Corporation
Datasheet
Price
0.13
Stock
0

Product Details

Package / Case
SOD-123F
Capacitance @ Vr, F
-
Supplier Device Package
S-FLAT (1.6x3.5)
Reverse Recovery Time (trr)
100ns
Current - Reverse Leakage @ Vr
50µA @ 800V
Voltage - DC Reverse (Vr) (Max)
800V
Current - Average Rectified (Io)
500mA
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction
-40°C ~ 150°C
Series
-
Voltage - Forward (Vf) (Max) @ If
3V @ 500mA
Diode Type
Standard
Part Status
Active
Mounting Type
Surface Mount