Images are for reference only. See Product Specifications for product details
Taiwan Semiconductor Corporation S4M V6G
DIODE GEN PURP 4A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.1
- Stock
- 0
Product Details
- Series
- TMBS®
- Voltage - Forward (Vf) (Max) @ If
- 800mV @ 3A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214AC, SMA
- Capacitance @ Vr, F
- 175pF @ 4V, 1MHz
- Supplier Device Package
- DO-214AC (SMA)
- Current - Reverse Leakage @ Vr
- 150µA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Current - Average Rectified (Io)
- 1.7A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -40°C ~ 150°C