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Taiwan Semiconductor Corporation S3M V6G
DIODE GEN PURP 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.1
- Stock
- 0
Product Details
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-219AB
- Capacitance @ Vr, F
- 240pF @ 4V, 1MHz
- Supplier Device Package
- DO-219AB (SMF)
- Current - Reverse Leakage @ Vr
- 85µA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Current - Average Rectified (Io)
- 3A
- Operating Temperature - Junction
- -40°C ~ 175°C
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - Forward (Vf) (Max) @ If
- 830mV @ 3A
- Series
- Automotive, AEC-Q101, eSMP®, TMBS®
- Diode Type
- Schottky