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Taiwan Semiconductor Corporation S12JC V6G
DIODE GEN PURP 600V 12A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.14
- Stock
- 0
Product Details
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SOD-123F
- Capacitance @ Vr, F
- -
- Supplier Device Package
- SOD-123F
- Current - Reverse Leakage @ Vr
- 800nA @ 60V
- Voltage - DC Reverse (Vr) (Max)
- 60V
- Current - Average Rectified (Io)
- 2A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 175°C
- Series
- Automotive, AEC-Q101
- Voltage - Forward (Vf) (Max) @ If
- 700mV @ 2A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Super Barrier