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Taiwan Semiconductor Corporation RS3MHR7G
DIODE GEN PURP 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.14
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 2.5µs
- Current - Reverse Leakage @ Vr
- 10µA @ 1000V
- Voltage - DC Reverse (Vr) (Max)
- 1000V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1.8A (DC)
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 940mV @ 2.5A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-277, 3-PowerDFN
- Capacitance @ Vr, F
- 40pF @ 4V, 1MHz
- Supplier Device Package
- TO-277A (SMPC)