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Taiwan Semiconductor Corporation RS3M V6G
DIODE GEN PURP 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.11
- Stock
- 0
Product Details
- Series
- -
- Operating Temperature - Junction
- 150°C (Max)
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 575mV @ 2A
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 3-PowerUDFN
- Capacitance @ Vr, F
- 90pF @ 10V, 1MHz
- Supplier Device Package
- 3-HUSON (2x2)
- Reverse Recovery Time (trr)
- 78ns
- Current - Reverse Leakage @ Vr
- 250µA @ 60V
- Voltage - DC Reverse (Vr) (Max)
- 60V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 2A