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Taiwan Semiconductor Corporation RS1ML R3G
DIODE GEN PURP 1KV 800MA SUB SMA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 15899
Product Details
- Supplier Device Package
- Sub SMA
- Reverse Recovery Time (trr)
- 1.8µs
- Current - Reverse Leakage @ Vr
- 5µA @ 1000V
- Voltage - DC Reverse (Vr) (Max)
- 1000V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Cut Tape (CT)
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-219AB
- Capacitance @ Vr, F
- 9pF @ 4V, 1MHz