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Taiwan Semiconductor Corporation HS3J R7G
DIODE GEN PURP 600V 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.16
- Stock
- 0
Product Details
- Capacitance @ Vr, F
- -
- Supplier Device Package
- X1-DFN1006-2
- Current - Reverse Leakage @ Vr
- 1µA @ 75V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Current - Average Rectified (Io)
- 250mA
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 150°C
- Series
- Automotive, AEC-Q101
- Voltage - Forward (Vf) (Max) @ If
- 800mV @ 200mA
- Packaging
- Tape & Reel (TR)
- Diode Type
- Super Barrier
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 0402 (1006 Metric)