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Taiwan Semiconductor Corporation HS2J M4G
DIODE GEN PURP 600V 2A DO214AA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.1
- Stock
- 0
Product Details
- Current - Reverse Leakage @ Vr
- 500µA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A (DC)
- Series
- -
- Operating Temperature - Junction
- -50°C ~ 150°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 850mV @ 1A
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SOD-123T
- Base Part Number
- CDBM1100
- Capacitance @ Vr, F
- 120pF @ 4V, 1MHz
- Supplier Device Package
- Mini SMA/SOD-123