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Taiwan Semiconductor Corporation HER308G R0G
DIODE GEN PURP 3A DO201AD
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.15
- Stock
- 0
Product Details
- Current - Reverse Leakage @ Vr
- 10µA @ 100V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Series
- eSMP®
- Current - Average Rectified (Io)
- 4A
- Packaging
- Tape & Reel (TR)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 4A
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-277, 3-PowerDFN
- Base Part Number
- S4PB
- Capacitance @ Vr, F
- 30pF @ 4V, 1MHz
- Supplier Device Package
- TO-277A (SMPC)
- Reverse Recovery Time (trr)
- 2.5µs