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Taiwan Semiconductor Corporation GPAS1003 MNG
DIODE GEN PURP 200V 10A TO263AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Capacitance @ Vr, F
- 50pF @ 4V, 1MHz
- Supplier Device Package
- TO-263AB (D²PAK)
- Current - Reverse Leakage @ Vr
- 5µA @ 400V
- Voltage - DC Reverse (Vr) (Max)
- 400V
- Current - Average Rectified (Io)
- 10A
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1.1V @ 10A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Standard
- Part Status
- Active