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Taiwan Semiconductor Corporation F1T5G A0G
DIODE GEN PURP 600V 1A TS-1
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 500ns
- Current - Reverse Leakage @ Vr
- 5µA @ 1000V
- Current - Average Rectified (Io)
- 1A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- Automotive, AEC-Q101
- Voltage - Forward (Vf) (Max) @ If
- 1.3V @ 1A
- Packaging
- Tape & Box (TB)
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- T-18, Axial
- Capacitance @ Vr, F
- 15pF @ 4V, 1MHz
- Supplier Device Package
- TS-1