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Taiwan Semiconductor Corporation ESH3D V7G
DIODE GEN PURP 200V 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.13
- Stock
- 0
Product Details
- Capacitance @ Vr, F
- 540pF @ 4V, 1MHz
- Supplier Device Package
- DO-221AC (SlimSMA)
- Current - Reverse Leakage @ Vr
- 400µA @ 60V
- Voltage - DC Reverse (Vr) (Max)
- 60V
- Current - Average Rectified (Io)
- 5A (DC)
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -40°C ~ 150°C
- Series
- TMBS®, SlimSMA™
- Voltage - Forward (Vf) (Max) @ If
- 470mV @ 2.5A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-221AC, SMA Flat Leads