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Taiwan Semiconductor Corporation ESH2BA R3G
DIODE GEN PURP 100V 1A DO214AC
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.13
- Stock
- 0
Product Details
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214AB, SMC
- Capacitance @ Vr, F
- 45pF @ 4V, 1MHz
- Supplier Device Package
- DO-214AB (SMC)
- Reverse Recovery Time (trr)
- 35ns
- Current - Reverse Leakage @ Vr
- 10µA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Current - Average Rectified (Io)
- 3A