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Taiwan Semiconductor Corporation ES3J V6G
DIODE GEN PURP 600V 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.16
- Stock
- 0
Product Details
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Series
- eSMP®
- Current - Average Rectified (Io)
- 1A
- Packaging
- Tape & Reel (TR)
- Operating Temperature - Junction
- -55°C ~ 175°C
- Diode Type
- Avalanche
- Voltage - Forward (Vf) (Max) @ If
- 1.25V @ 1A
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-220AA
- Base Part Number
- AR1PD
- Capacitance @ Vr, F
- 12.5pF @ 4V, 1MHz
- Supplier Device Package
- DO-220AA (SMP)
- Reverse Recovery Time (trr)
- 140ns
- Current - Reverse Leakage @ Vr
- 1µA @ 200V