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Taiwan Semiconductor Corporation ES3DVHR7G
DIODE GEN PURP 200V 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.15
- Stock
- 0
Product Details
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Series
- -
- Current - Average Rectified (Io)
- 3A
- Packaging
- Tape & Reel (TR)
- Operating Temperature - Junction
- -65°C ~ 150°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 950mV @ 3A
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-201AD, Axial
- Base Part Number
- EGP30B
- Capacitance @ Vr, F
- 95pF @ 4V, 1MHz
- Supplier Device Package
- DO-201AD
- Reverse Recovery Time (trr)
- 50ns
- Current - Reverse Leakage @ Vr
- 5µA @ 100V