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Taiwan Semiconductor Corporation ES3A M6G
DIODE GEN PURP 50V 3A DO214AB
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 35ns
- Current - Reverse Leakage @ Vr
- 10µA @ 50V
- Voltage - DC Reverse (Vr) (Max)
- 50V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 3A
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 950mV @ 3A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-214AB, SMC
- Capacitance @ Vr, F
- 45pF @ 4V, 1MHz
- Supplier Device Package
- DO-214AB (SMC)