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Taiwan Semiconductor Corporation ES2LJHR5G
DIODE GEN PURP 600V 2A DO214AA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.1
- Stock
- 0
Product Details
- Current - Reverse Leakage @ Vr
- 250µA @ 20V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 20V
- Series
- eSMP®
- Current - Average Rectified (Io)
- 1.1A
- Packaging
- Tape & Reel (TR)
- Operating Temperature - Junction
- 125°C (Max)
- Diode Type
- Schottky
- Voltage - Forward (Vf) (Max) @ If
- 420mV @ 1.1A
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-219AB
- Base Part Number
- SL02
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-219AB (SMF)
- Reverse Recovery Time (trr)
- 10ns