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Taiwan Semiconductor Corporation ES2JHM4G
DIODE GEN PURP 600V 2A DO214AA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.13
- Stock
- 0
Product Details
- Current - Reverse Leakage @ Vr
- 5µA @ 50V
- Voltage - DC Reverse (Vr) (Max)
- 50V
- Current - Average Rectified (Io)
- 1A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 175°C
- Series
- Automotive, AEC-Q101, Superectifier®
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- DO-213AB, MELF (Glass)
- Capacitance @ Vr, F
- 20pF @ 4V, 1MHz
- Supplier Device Package
- DO-213AB
- Reverse Recovery Time (trr)
- 50ns