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Taiwan Semiconductor Corporation ES1JHM2G
DIODE GEN PURP 600V 1A DO214AC
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.08
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 25ns
- Current - Reverse Leakage @ Vr
- 10µA @ 200V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Series
- -
- Current - Average Rectified (Io)
- 800mA
- Packaging
- Cut Tape (CT)
- Operating Temperature - Junction
- 150°C (Max)
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 950mV @ 800mA
- Part Status
- Discontinued at Digi-Key
- Mounting Type
- Surface Mount
- Package / Case
- SOD-123
- Base Part Number
- RF081M2S
- Capacitance @ Vr, F
- -
- Supplier Device Package
- PMDU