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Taiwan Semiconductor Corporation ES1JF R3G
DIODE GEN PURP 600V 1A SMA-FL
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 500mV @ 3A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Schottky
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- DO-201AD, Axial
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-201AD
- Current - Reverse Leakage @ Vr
- 500µA @ 30V
- Voltage - DC Reverse (Vr) (Max)
- 30V
- Current - Average Rectified (Io)
- 3A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 125°C