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Taiwan Semiconductor Corporation ES1DL RQG
DIODE GEN PURP 200V 1A SUB SMA
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.07
- Stock
- 0
Product Details
- Package / Case
- DO-219AB
- Capacitance @ Vr, F
- 8pF @ 1V, 1MHz
- Supplier Device Package
- Sub SMA
- Reverse Recovery Time (trr)
- 35ns
- Current - Reverse Leakage @ Vr
- 5µA @ 300V
- Voltage - DC Reverse (Vr) (Max)
- 300V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 150°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 1.3V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount