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Taiwan Semiconductor Corporation 31DF6 R0G
DIODE GEN PURP 600V 3A DO201AD
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.22
- Stock
- 0
Product Details
- Current - Reverse Leakage @ Vr
- 5µA @ 200V
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 4A
- Series
- -
- Operating Temperature - Junction
- -65°C ~ 175°C
- Packaging
- Tape & Box (TB)
- Voltage - Forward (Vf) (Max) @ If
- 890mV @ 4A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-201AD, Axial
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-201AD
- Reverse Recovery Time (trr)
- 35ns