Images are for reference only. See Product Specifications for product details
Taiwan Semiconductor Corporation 1N5401GHA0G
DIODE GEN PURP 100V 3A DO201AD
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0.1
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 2µs
- Current - Reverse Leakage @ Vr
- 5µA @ 1000V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 1000V
- Series
- SUPERECTIFIER®
- Current - Average Rectified (Io)
- 1A
- Packaging
- Tape & Box (TB)
- Operating Temperature - Junction
- -65°C ~ 175°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 1A
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-204AC, DO-15, Axial
- Base Part Number
- 1N4586
- Capacitance @ Vr, F
- 15pF @ 4V, 1MHz
- Supplier Device Package
- DO-204AC (DO-15)