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ROHM Semiconductor TT8M3TR

MOSFET N/P-CH 20V 2.5A TSST8

Manufacturer
ROHM Semiconductor
Datasheet
Price
0
Stock
2236

Product Details

Series
Automotive, AEC-Q101
Gate Charge (Qg) (Max) @ Vgs
5.7nC @ 4.5V, 10nC @ 4.5V
FET Type
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
20V
Packaging
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
530pF @ 10V, 705pF @ 10V
FET Feature
Logic Level Gate, 1.8V Drive
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta), 2.6A (Ta)
Part Status
Not For New Designs
Power - Max
800mW (Ta)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Supplier Device Package
TSOT-26