ROHM Semiconductor TT8J13TCR

Product Details

FET Feature

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds

115pF @ 10V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

200mA

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Base Part Number

*J1

Vgs(th) (Max) @ Id

1V @ 100µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

1.2Ohm @ 200mA, 4.5V

Series

-

Supplier Device Package

EMT6

FET Type

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 4.5V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

20V