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ROHM Semiconductor SCT3022ALGC11

MOSFET NCH 650V 93A TO247N

Manufacturer
ROHM Semiconductor
Datasheet
Price
42.07
Stock
1854

Product Details

FET Feature
-
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
18V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4V @ 4.4mA
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
117mOhm @ 10A, 18V
Series
-
Power Dissipation (Max)
262W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
106nC @ 18V
Vgs (Max)
+22V, -6V
Drain to Source Voltage (Vdss)
1200V
Technology
SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds
1850pF @ 800V