ROHM Semiconductor RS1E321GNTB1

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

9mOhm @ 14A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

3W (Ta), 6.5W (Tc)

FET Type

P-Channel

Supplier Device Package

8-SO

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

85nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

8V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

-

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

1V @ 250µA