ROHM Semiconductor QS8K11TCR

Product Details

Part Status

Discontinued at Digi-Key

Power - Max

-

Mounting Type

Surface Mount

Package / Case

9-VFBGA

Vgs(th) (Max) @ Id

2.5V @ 100µA, 2.5V @ 20µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V

Supplier Device Package

9-BGA (1.35x1.35)

Series

eGaN®

Gate Charge (Qg) (Max) @ Vgs

0.22nC @ 5V, 0.044nC @ 5V

FET Type

3 N-Channel (Half Bridge + Synchronous Bootstrap)

Drain to Source Voltage (Vdss)

60V, 100V

Packaging

Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds

22pF @ 30V, 7pF @ 30V

FET Feature

GaNFET (Gallium Nitride)

Current - Continuous Drain (Id) @ 25°C

1.7A, 500mA