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ROHM Semiconductor HS8K1TB
30V NCH+NCH POWER MOSFET
- Manufacturer
- ROHM Semiconductor
- Datasheet
- Price
- 0
- Stock
- 3000
Product Details
- Rds On (Max) @ Id, Vgs
- 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
- Supplier Device Package
- 8-SOP
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 9.4nC @ 10V, 9nC @ 10V
- FET Type
- N and P-Channel Complementary
- Drain to Source Voltage (Vdss)
- 60V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 527pF @ 30V, 436pF @ 30V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
- Part Status
- Active
- Power - Max
- 1.4W (Ta), 5.7W (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)