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ROHM Semiconductor BSM080D12P2C008

SIC POWER MODULE-1200V-80A

Manufacturer
ROHM Semiconductor
Datasheet
Price
301.74
Stock
14

Product Details

Package / Case
Module
Vgs(th) (Max) @ Id
4V @ 68mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
-
Supplier Device Package
Module
Series
-
Gate Charge (Qg) (Max) @ Vgs
-
FET Type
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Packaging
Tray
Input Capacitance (Ciss) (Max) @ Vds
35000pF @ 10V
FET Feature
Silicon Carbide (SiC)
Current - Continuous Drain (Id) @ 25°C
300A (Tc)
Part Status
Active
Power - Max
1875W
Mounting Type
Chassis Mount