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Renesas Electronics America HS54095TZ-E
MOSFET N-CH 600V 0.2A TO-92
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.3mOhm @ 50A, 10V
- Series
- -
- Power Dissipation (Max)
- 1.5W (Ta), 119W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263 (D²Pak)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 100nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5550pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB