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Renesas Electronics America HAT1069C-EL-E
MOSFET P-CH SMD
- Manufacturer
- Renesas Electronics America
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Power Dissipation (Max)
- 30W (Tc)
- Series
- -
- Supplier Device Package
- 5-LFPAK
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 125nC @ 10V
- Vgs (Max)
- +10V, -20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5600pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 40A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C
- Rds On (Max) @ Id, Vgs
- 4.5mOhm @ 20A, 10V