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ON Semiconductor NVMFD5873NLT1G
MOSFET 2N-CH 60V 10A SO8FL
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
- Supplier Device Package
- 8-PQFN (5x6)
- Series
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs
- 33nC @ 10V, 117nC @ 10V
- FET Type
- 2 N-Channel (Dual) Asymmetrical
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1410pF @ 15V, 4860pF @ 15V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
- Part Status
- Active
- Power - Max
- 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Vgs(th) (Max) @ Id
- 2.5V @ 320µA, 3V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)