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ON Semiconductor HGT1S10N120BNS
IGBT 1200V 35A 298W TO263AB
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 1.86
- Stock
- 0
Product Details
- Input Type
- Standard
- Reverse Recovery Time (trr)
- 28ns
- Gate Charge
- 23nC
- Current - Collector (Ic) (Max)
- 14A
- Part Status
- Not For New Designs
- Current - Collector Pulsed (Icm)
- 42A
- Power - Max
- 49W
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Test Condition
- 480V, 7.8A, 75Ohm, 15V
- Switching Energy
- 240µJ (on), 260µJ (off)
- Td (on/off) @ 25°C
- 17ns/160ns
- Series
- -
- Operating Temperature
- -55°C ~ 150°C (TJ)
- IGBT Type
- -
- Supplier Device Package
- TO-262
- Packaging
- Tube
- Vce(on) (Max) @ Vge, Ic
- 2.4V @ 15V, 7.8A