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ON Semiconductor FDMS3602AS
MOSFET 2N-CH 25V 15A/26A POWER56
- Manufacturer
- ON Semiconductor
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Supplier Device Package
- 8-SO
- Series
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- FET Type
- N and P-Channel
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 520pF @ 25V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 5.8A, 4.3A
- Part Status
- Active
- Power - Max
- 2.5W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 45mOhm @ 5.8A, 10V