ON Semiconductor FDMD8280

Product Details

Series

NexFET™

Gate Charge (Qg) (Max) @ Vgs

7.9nC @ 4.5V, 19.3nC @ 4.5V

FET Type

2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss)

25V

Packaging

Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds

1.04nF @ 12.5V, 2.51nF @ 12.5V

FET Feature

Logic Level Gate, 5V Drive

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Part Status

Active

Power - Max

12W (Ta)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

1.85V @ 250µA, 1.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V

Supplier Device Package

8-VSON-CLIP (5x6)