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NXP USA Inc. AFT27S006NT1
FET RF 65V 2.17GHZ PLD1.5W
- Manufacturer
- NXP USA Inc.
- Datasheet
- Price
- 10.25
- Stock
- 5915
Product Details
- Supplier Device Package
- Die
- Series
- eGaN®
- Gate Charge (Qg) (Max) @ Vgs
- 18nC @ 5V
- FET Type
- N-Channel
- Drain to Source Voltage (Vdss)
- 40V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1900pF @ 20V
- Technology
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 31A (Ta)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 16mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.4mOhm @ 30A, 5V