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Nexperia USA Inc. PMXB360ENEAZ
MOSFET N-CH 80V 1.1A 3DFN
- Manufacturer
- Nexperia USA Inc.
- Datasheet
- Price
- 0
- Stock
- 17208
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 120mOhm @ 2.4A, 10V
- Series
- -
- Power Dissipation (Max)
- 400mW (Ta), 8.3W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- DFN1010D-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 11nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 309pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.4A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 3-XDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA